Dr. Zhi Lin

Lecturer, School of Microelectronics and Communication Engineering

Email: faeyz@ntu.edu.sg

Biography

Dr. Lin received his B.Eng. and PhD in June 2009 and December 2015, respectively, both from University of Electronic Science and Technology of China (UESTC). He joined the Department of Integrated Circuits Design and Engineering, School of Microelectronics and Communication Engineering, Chongqing University as a lecturer in February 2016.

Dr. Lin has published more than 20 scientific journal and conference papers. He also holds 3 Chinese patents and 1 US patent. He has presided or participated in over 10 projects from the National Natural Science Foundation of China, Chongqing Municipal Science and Technology Commission and some companies.

Research Interests

- Semiconductor power devices

- Power management integrated circuits

- Power electronic system

Current Projects

Study on the Voltage-sustaining and Turning-off Mechanism of Superjunction Power IGBT Based on the Bulk Auger Recombination Effect

Design of Integrated SenseFET

Selected Publications

Z. Lin, J. Guo, Z. Wang, S. Hu, J. Zhou and F. Tang, "Novel Isolation Structure for High-Voltage Integrated Superjunction MOSFETs",IEEE Electron Device Letters, 2020, 41(1): 115-118.

Z. Lin, "Study on the Intrinsic Origin of Output Capacitor Hysteresis in Advanced Superjunction MOSFETs",IEEE Electron Device Letters, 2019, 40(8): 1297-1300.

Z. Lin, Q. Yuan, S. Hu, X. Zhou, J. Zhou and F. Tang, "A Simulation Study of a Novel Superjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery Body Diode",IEEE Transactions on Electron Devices, 2019, 66(5): 2333-2338.

Z. Lin, S. Hu, Q. Yuan, X. Zhou and F. Tang, "Low-Reverse Recovery Charge Superjunction MOSFET With a p-type Schottky Body Diode",IEEE Electron Device Letters, 2017, 38(8): 1059-1062.

Z. Linand X. Chen, "A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates",IEEE Electron Device Letters, 2015, 36(6): 558-590.